IXFN60N60 |
RFQ for IXFN60N60 Required Field |
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| Technical/Catalog Information | IXFN60N60 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 15000pF @ 25V |
| Power - Max | 700W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 380nC @ 10V |
| Package / Case | SOT-227B miniBLOC |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFN60N60 IXFN60N60 |
| Product | Manufacturers | Pack | D/C |
| IXFN60N60 | - | MODULE | N/A |
Typical Application |
Features |
| • DC-DC converters• Battery chargers• Switched-mode and resonant-mode power supplies• DC choppers• Temperature and lighting controls | • International standard packages• miniBLOC, with Aluminium nitride isolation• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low package inductance• Fast intrinsic Rectifier |
| Symbol | Test Conditions |
Maximum Ratings | |
| VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ |
600 600 |
V V |
| VGS VGEM |
Continuous Transient |
±20 ±30 |
V V |
| ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
60 240 60 |
A A A |
| EAR EAS |
TC = 25°C |
64 |
mJ |
| dv/dt IS | IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 Ω |
5 |
V/ns |
| PD | TC = 25°C |
700 |
W |
| TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
| VISOL | 50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s |
2500 |
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